Terabyte Storage on a Chip

Another milestone in the quest for high capacity, non-volatile data storage will enable a full terabyte of data to be stored on a chip the size of a postage stamp. Utilizing a super dense memory array architecture, the three-dimensional resistive RAM technology (3D RRAM) overcomes many of the technical challenges that have previously limited high-speed data access and throughput.

First, the memory cell structure contains a conductive layer with a metallic nano-filament to prevent performance degradation, which is a problem with traditional flash memory. Second, the patented 3-D architecture can be built on top of standard CMOS wafers, making it cost effective to produce. Finally, the new technology builds on a technique that has a proven track record for high speed storage and retrieval.

In today’s high speed, data driven world, the demand for better storage solutions will continue to increase. It’s been estimated that the market for non-volatile memory will reach nearly $50 billion by 2016.