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Long Term Memory

A new advancement in Magnetoresistive Random Access Memory (MRAM) could revolutionize computers and other electronic systems by retaining information and data in memory for 20 years or more in comparison to about one year for current devices.

MRAM is a type of non-volatile memory that is capable of high density, low power performance. While today’s MRAM chips use an “in plane” current-induced magnetization process and ultra-thin (1 nanometer) ferromagnetic structures, the new technology incorporates multi-layer structures up to 20 times thicker.

The net result is increased storage space, faster memory that remains intact even in the event of a power failure, and shorter boot-up cycles for computers, laptops and mobile devices. Other applications that will be enhanced by the new technology include transportation systems, industrial control systems, power management and health care electronics.

For information: Yang Hyunsoo, National University of Singapore, University Hall, Lee Kong Chian Wing, Office E5-03-14, 21 Lower Kent Ridge Road, Singapore, 119077; phone: +65-6516-7217; email: eleyang@nus.edu.sg; Web site: www.nus.edu.sg/     

Daniel Burrus' Top Twenty Technology-Driven Trends for 2014